dna30e2200pa single diode high voltage standard rectifier 1 3 part number dna30e2200pa backside: anode fav f vv 1.24 rrm 30 2200 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20130123c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dna30e2200pa v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.26 r 0.7 k/w r min. 30 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 140 p tot 210 w t = 25c c r k/w 30 2200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.53 t = 25c vj 150 v f0 v 0.83 t = c vj 175 r f 13.4 m ? v 1.24 t = c vj i = a f v 30 1.63 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 2200 max. repetitive reverse blocking voltage t = 25c vj c j 7 j unction capacitance v = v; 700 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 370 400 495 480 a a a a 315 340 685 665 2200 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 2300 0.50 ixys reserves the right to change limits, conditions and dimensions. 20130123c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dna30e2200pa ratings xxxxxx yyww z logo part number date code lot # abcdef product markin g a ssembly line d n a 30 e 2200 pa part number diode high voltage standard rectifier (>= 2000v) single diode to-220ac (2) = = = DNA30EM2200PZ to-263ab (d2pak) 2200 current rating [a] reverse voltage [v] = = = = package t vj c m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 175 -55 dna30e2200fe dna30e2200iy i4-pac (2hv) to-262 (2hv) (i2pak) 2200 2200 to-220 similar part package voltage class dna30e2200pz to-263ab (d2pak) 2200 delivery mode quantity code no. part number marking on product ordering dna30e2200pa 507762 tube 50 dna30e2200pa standard threshold voltage v 0.83 m ? v 0 max r 0 max slope resistance * 10.2 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130123c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dna30e2200pa dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 5.08 bsc 0.200 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 2x b2 e ?p q d l1 l 2x b e c a2 h1 a1 a 13 4 1 3 outlines to-220 ixys reserves the right to change limits, conditions and dimensions. 20130123c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dna30e2200pa 0.001 0.01 0.1 1 150 200 250 300 234567890 1 1 10 2 10 3 0.5 1.0 1.5 2.0 0 20 40 60 0102030 0 10 20 30 40 50 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 175 200 0 10 20 30 40 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m t ] a [ amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation versus direct output current and ambient temperature fig. 5 max. forward current versus case temperature fig. 6 transient thermal impedance junction to case t[ms] constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.03 0.0003 2 0.072 0.0065 30.131 0.027 40.367 0.105 50.1 0.8 0 25 50 75 100 125 150 175 200 t vj = 150c t vj = 125c t vj =25c t vj = 45c 50 hz, 80% v rrm t vj =45c v r = 0 v dc = 1 0.5 0.4 0.33 0.17 0.08 r thka = 0.6 k/w 0.8 k/w 1.0 k/w 2.0 k/w 4.0 k/w 8.0 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 t vj =150c t vj =150c rectifier ixys reserves the right to change limits, conditions and dimensions. 20130123c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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